Ph.D. in Materials Science and Engineering, Northwestern University, 1983
S.M. in Polymerics, Massachusetts Institute of Technology, 1976
B.S. in Materials Science and Engineering, Northwestern University, 1975
Dr. Richard Matyi has had a successful and productive career in academia, government and industry. He has more than 30 years of direct experience in the growth, characterization, and utilization of the major materials classes – metals, ceramics, semiconductors, and polymers–with hands-on experience in the application of a variety of characterization tools. His record of scholarly work includes more than 180 scientific publications, more than 120 technical presentations, six books or book chapters, three U.S. patents issued, two Standard Reference Materials created and one ISO standard published. He is an internationally recognized expert in x-ray methods used in materials analysis, with documented leadership in high-resolution x-ray diffraction and x-ray reflectometry approaches to the structural characterization of materials.
Before joining Florida Polytechnic University in 2015, Matyi served for more than a decade as a tenured professor of nanosciences in the Colleges of Nanoscale Science and Engineering (CNSE) at SUNY Polytechnic University in Albany, New York. At the CNSE, he established a high-resolution x-ray diffraction capability and instituted multiple collaborative academic and industrial research programs for the analysis of defects in materials ranging from bulk and thin film semiconductors to inorganic and organic materials. Matyi was also heavily involved in curriculum development for nanotechnology and headed the CNSE effort to establish a new “Foundations of Nanotechnology” modular curriculum for first-year graduate students that provided an avenue for students from diverse academic backgrounds to develop the interdisciplinary knowledge needed for their research careers. Subsequently, he was given the lead role at the CNSE in the development and implementation of two first-of-their-kind undergraduate curricula leading to the baccalaureate degrees in nanoscale science and nanoscale engineering.
From 2000 to 2004, Matyi worked as a physicist at the National Institute of Standards and Technology (NIST) in Maryland, where he was a member of the Quantum Metrology Group in the Atomic Physics Division. While at NIST, he developed research programs in precision x-ray measurement technologies, the analysis of defects in crystalline materials with high-resolution x-ray diffraction, the development of high-resolution x-ray methods, and the application of x-ray analytical techniques to semiconductor manufacturing. He championed the return of NIST to an international collaboration to redefine the Avogadro constant (and eventually, the kilogram) via the Si crystal density, and performed high precision (d/d << 10-8) lattice parameter measurements on ultra-pure silicon.
Prior to NIST, he was a tenured full professor in the Department of Materials Science and Engineering at the University of Wisconsin at Madison. His research there centered on the fabrication of nanostructures from various materials (primarily elemental and compound semiconductors) and their characterization with high-resolution x-ray probes, particularly high-resolution triple axis diffraction techniques. His research also involved the structural characterization of novel epitaxial systems; process-induced surface damage in semiconductor materials; plasma-source ion implantation; x-ray photo-assisted materials growth; and high-resolution x-ray diffraction analysis of protein crystals.
Earlier in his career, Matyi was a technical staff member in the Materials Science Laboratory at Texas Instruments in Dallas. In addition to establishing an extensive x-ray diffraction facility that provided company-wide analytical support for TI customers, he was involved in the molecular beam epitaxy growth of materials systems. This work generated materials for ultra-small electronics (long before the term “nanotechnology” became part of popular culture), including the first three terminal device based on resonant tunneling and the first controllable three-dimensional quantized structure (“quantum dot”) in an epitaxially grown heterostructure. He also demonstrated the integration of GaAs and silicon materials and device technologies for the first time in a single integrated circuit and executed a parallel program to develop the GaAs/Si materials technology required for the co-integration process.